Investigation on the Galvanic Corrosion of Copper during Chemical Mechanical Polishing of Ruthenium Barrier Layer

被引:0
作者
Jiang, Liang [1 ]
He, Yongyong [1 ]
Lu, Xinchun [1 ]
Luo, Jianbin [1 ]
机构
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
来源
2014 INTERNATIONAL CONFERENCE ON PLANARIZATION/CMP TECHNOLOGY (ICPT) | 2014年
关键词
Chemical mechanical polishing; galvanic corrosion; copper; ruthenium barrier layer; SODIUM PERIODATE; THIN-FILM; GUANIDINE CARBONATE; POTASSIUM PERIODATE; DIFFUSION BARRIER; PLANARIZATION; OXIDATION; SLURRY; GLYCINE; CMP;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the development of ultra-large scale integrated circuits, ruthenium has been used as one of the most promising barrier materials for copper interconnects by replacing the conventional Ta/TaN bilayer film. However, during the polishing process of Ru/Cu structure using KIO4 slurries, the galvanic corrosion of copper could happen due to the large difference of the corrosion potentials between ruthenium and copper. This paper investigates the galvanic corrosion of copper of the Ru/Cu galvanic couple in KIO4-based slurries. The results reveal that, in KIO4 slurries without the addition of effective inhibitors, the galvanic corrosion of copper can greatly accelerate the oxidation and the corrosion of copper, and as a result, more reaction products, such as Cu(IO4)(2)/Cu(IO3)(2) and CuO, can be rapidly formed on the copper surface, by which the material removal rate (MRR) of copper increases and the defects of copper could be aggravated. According to the theory of galvanic corrosion, two types of methods for controlling the galvanic corrosion of copper are proposed, i.e. the 1st one is using other oxidizer instead and the 2nd one is adding appropriate inhibitors. For the 1st method, KIO3 is used for demonstration and the effectiveness is verified. For the 2nd method, the combination of benzotriazole (BTA) and a non-ionic surfactant is tested. With the addition of BTA and the non-ionic surfactant, the theoretical galvanic current density decreases by one order of magnitude, and the MRR of copper slightly decreases after copper is connected to ruthenium to form a Ru/Cu galvanic couple. The passivation mechanism of BTA and the non-ionic surfactant on the copper surface can be proposed as follows: firstly the added BTA can form hydrophobic Cu-BTA complex on the copper surface; then the hydrophobic polypropylene oxide segments of the non-ionic surfactant can be effectively absorbed on the hydrophobic Cu-BTA complex as a supplement. These two parts are integrated as a complete passivating film on the copper surface to protect it from corrosion and excessive mechanical abrasion.
引用
收藏
页码:209 / 216
页数:8
相关论文
共 68 条
  • [61] Potassium Bromate as an Oxidizing Agent in a Titania-Based Ru CMP Slurry
    Victoria, S. Noyel
    Sharma, Pranav P.
    Suni, Ian Ivar
    Ramanathan, S.
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (11) : H385 - H387
  • [62] White D., 2010, BOOK MECH INVESTIGAT
  • [63] White D., 2011, RUTHENIUM CMP COMPOS
  • [64] Electrochemical studies of a Cu(II)-Cu(III) couple: Cyclic voltammetry and chronoamperometry in a strong alkaline medium and in the presence of periodate anions
    Wu, ZJ
    Zhang, ZB
    Liu, LS
    [J]. ELECTROCHIMICA ACTA, 1997, 42 (17) : 2719 - 2723
  • [65] Yuan-xin F., 2014, CHINESE J BIOL, V1, P028
  • [66] Yun S., 2006, SLURRY CHEM MECH POL
  • [67] Zakharans V. Y., 1983, CHEM NAT COMPD, V19, P216
  • [68] Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (KIO4)-Based Slurry
    Zeng, Xu
    Wang, Jing-Xuan
    Lu, Hai-Sheng
    Chen, Fei
    Zhang, Xiao-Meng
    Qu, Xin-Ping
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (11) : C525 - C529