Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

被引：4

作者：

Wang, Fang ^{[1
]}

Li, Bo ^{[2
]}

Xu, Baolei ^{[2
]}

Liu, Longfei ^{[3
]}

Ou, Yun ^{[1
]}

Tian, Li ^{[3
]}

Wang, Wei ^{[4
]}

机构：

[1] Hunan Univ Sci & Technol, Hunan Prov Key Lab Hlth Maintenance Mech Equipmen, Xiangtan 411201, Hunan, Peoples R China

[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China

[3] Hunan Univ Sci & Technol, Sch Mat Sci & Engn, Xiangtan 411201, Hunan, Peoples R China

[4] China Three Gorges Corp, Chengdu 610041, Sichuan, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 10期

基金：

中国国家自然科学基金;

关键词：

ferroelectric field effect transistor (FeFET); grain boundaries; grain orientation; phase field model; polycrystalline ferroelectric films; SIMULATION; EVOLUTION; SIZE;

D O I：

10.1002/pssa.201700277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of grain boundary thickness and grain orientation on the electrical behavior of a ferroelectric field effect transistor with a polycrystalline gate are investigated using a phase field model in conjunction with the basic device equations of the field effect transistor. It is found that the grain boundary and grain orientation have a significant effect on the C-V relation curve and the output characteristic curve through the remnant polarization value and the coercive field of polycrystalline ferroelectric thin film. The grain orientation and grain boundary cause the memory window of the C-V relation curves to narrow. And the grain orientation and grain boundary have an influence on the on/off state source-drain current, decrease their on-off ratio of the output characteristics curves in the ferroelectric field effect transistor.

引用

页数：9

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