Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs

被引：28

作者：

Agopian, Paula G. D. ^{[1
]}

Martino, Marcio D. V. ^{[1
]}

dos Santos, Sara D. ^{[1
]}

Neves, Felipe S. ^{[1
]}

Martino, Joao Antonio ^{[1
]}

Rooyackers, Rita ^{[2
]}

Vandooren, Anne ^{[2
]}

Simoen, Eddy ^{[2
]}

Thean, Aaron Voon-Yew ^{[2
]}

Claeys, Cor ^{[2
,3
]}

机构：

[1] Univ Sao Paulo, BR-05508070 Sao Paulo, Brazil

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 01期

关键词：

Analog performance; band-to-band tunneling (BTBT); low-frequency noise; tunnel field-effect transistor (TFET); FIELD-EFFECT TRANSISTORS; FLICKER NOISE;

D O I：

10.1109/TED.2014.2367659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of this paper is to study the analog performance parameters of tunnel field-effect transistors (TFETs) with different source compositions and process conditions. The experimental matrix included devices with either a 100% silicon or Si1-xGex source, so that the germanium amount at the source/channel interface could be correlated with the prevailing transport mechanism and its impact on transconductance (gm), output conductance (g(DS)), and early voltage (V-EA) could be analyzed. The used process conditions were highlighted by comparing a reference split with no Si passivation to the cases with 12 and 18 Si monolayers to determine their influence on the interface trap density and eventual reduction of the traps in the gate oxide. All these process parameters enable to make conclusions on the intrinsic voltage gain (A(V)) and the low-frequency noise. Based on these results, the suitability of each type of TFET has been discussed, revealing that 100% Si may still be considered for analog applications depending on the bias conditions.

引用

页码：16 / 22

页数：7

共 23 条

[1] Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric [J].