Comparison of electrical characteristics of metamorphic HEMTs with InPHEMTs and PHEMTs

被引：2

作者：

Kawada, K

Ohno, Y

Kishimoto, S

Maezawa, K

Mizutani, T

Takakusaki, M

Nakata, H

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nikko Mat, Toda Plant, Toda, Saitama 3358502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

HEMTs; MHEMTs; InGaAs; metamorphic; step-graded buffer; low-frequency noise; side-gate effect;

D O I：

10.1143/JJAP.42.2219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and pseudomorphic HEMTs (PHEMTs). Present MHEMTs have exhibited superior characteristics in the low-frequency (LF) noise and side-gate effect to InP HEMTs and PHEMTs. A sufficiently high current-gain cutoff frequency of 210GHz was obtained for the MHEMTs with gate length of 0.1 mum.

引用

页码：2219 / 2222

页数：4

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