Cu(In,Ga)Se2 films obtained from γ-In2Se3 thin film

被引：18

作者：

Amory, C ^{[1
]}

Bernède, JC ^{[1
]}

Halgand, E ^{[1
]}

Marsillac, S ^{[1
]}

机构：

[1] Univ Nantes, FSTN, LPSE, F-44320 Nantes 3, France

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

gamma-In2Se3; Cu(In; Ga)Se-2; Co-evaporation;

D O I：

10.1016/S0040-6090(03)00237-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu(In,Ga)Se-2 (CIGS) films were elaborated in a new 'two stages' process using gamma-ln(2)Se(3) as thin film precursor. The first stage consists on the elaboration of this precursor and in the second Cu and Ga were evaporated and selenized at low temperature (425 degreesC). At the end of each stage, films were characterized by X-ray diffraction, electron micro probe analysis, secondary electron microscopy and X-ray photoelectron spectrometer measurements. These measurements show the precursor layer is well crystallized, dense and homogeneous. The beneficial existence of MoSe2 thin film between Cu(In,Ga)Se-2 and Molybdenum back contact is demonstrated. In spite of the diffusion of Ga toward the back contact, no compound MoxGay was found. With this technique, first solar cell (0.47 cm(2)) with efficiency of 5.5% was fabricated. (C) 2003 Elsevier Science B.V All rights reserved.

引用

页码：22 / 25

页数：4

共 12 条

[1] About the preferential sputtering of chalcogen from transition metal dichalcogenide compounds and the determination of compound stoichiometry from XPS peak positions [J].