Detection of Arsenic Dopant Atoms in Silicon Crystal by Aberration Corrected Scanning Transmission Electron Microscopy

被引：0
作者：
Oshima, Y. [1 ,2 ]
Hashimoto, Y. [2 ]
Sawada, H. [1 ,3 ]
Hshikawa, N. [4 ]
Asayama, K. [4 ]
Kondo, Y. [1 ,3 ]
Tanishiro, Y. [1 ,5 ]
Takayanagi, K. [1 ,5 ]
机构：
[1] CREST, JST, Chiyoda Ku, Tokyo 1020075, Japan
[2] Tokyo Tech, Dep Mat & Sci Eng, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] JEOL Ltd, Tokyo 1968558, Japan
[4] Renesas Technology Corp, Tokyo 1878588, Japan
[5] Tokyo Tech, Dep Phys, Meguro Ku, Tokyo 1528551, Japan
来源：
MICROSCOPY AND MICROANALYSIS | 2009年 / 15卷
关键词：
RESOLUTION; SI;
D O I：
10.1017/S1431927609095233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1488 / 1489
页数：2
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