Study of MgB2/I/Pb tunnel junctions on MgO (211) substrates

被引：24

作者：

Chen, K. E. ^{[1
]}

Cui, Y. ^{[1
]}

Li, Qi ^{[1
]}

Zhuang, C. G. ^{[1
,2
,3
,4
]}

Liu, Zi-Kui ^{[4
]}

Xi, X. X. ^{[1
,4
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscopy, Beijing 100871, Peoples R China

[3] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 01期

基金：

美国国家科学基金会;

关键词：

Magnesium - Electron tunneling - Tunnel junctions;

D O I：

10.1063/1.2956414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgB2/insulator/Pb tunnel junctions have been made using MgB2 films on MgO (211) substrates. The c axis of the bottom electrode MgB2 film, parallel to the MgO [111] direction, was tilted with respect to the film normal, exposing the ab planes for electron tunneling. Tunneling contributions from both the or and pi bands were present in the tunneling spectra. The temperature and the magnetic field dependences of both gaps were studied, shedding light on the two-gap properties of MgB2. (C) 2008 American Institute of Physics.

引用

页数：3

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