Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

被引：2
作者：
Pasternak, R
Chatterjee, A
Shirokaya, YV
Choi, BK
Marka, Z
Miller, JK
Albridge, RG
Rashkeev, SN
Pantelides, ST
Schrimpf, RD
Fleetwood, DM
Tolk, NH
机构：
[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
laser measurements; semiconductor device radiation effects; x-ray effects;
D O I：
10.1109/TNS.2003.821387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radiation induced leakage current in a variable-thickness SiO2-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.
引用
收藏
页码：1929 / 1933
页数：5
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