Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

被引:22
作者
Cheng, James [1 ]
You, Sifang [2 ]
Rahman, Samia [1 ]
Lo, Yu-Hwa [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
来源
OPTICS EXPRESS | 2011年 / 19卷 / 16期
关键词
FLOATING GUARD RING; PHOTODIODES; JUNCTION;
D O I
10.1364/OE.19.015149
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22 mu m diameter device. (C) 2011 Optical Society of America
引用
收藏
页码:15149 / 15154
页数:6
相关论文
共 10 条
  • [1] Self-Quenched InGaAs Single-Photon Detector
    Cheng, James
    You, Sifang
    Zhao, Kai
    Lo, Yuhwa
    [J]. ADVANCED PHOTON COUNTING TECHNIQUES III, 2009, 7320
  • [2] Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode
    Cho, SR
    Yang, SK
    Ma, JA
    Lee, SD
    Yu, JS
    Choo, AG
    Kim, TI
    Burm, J
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (05) : 534 - 536
  • [3] Buried-mesa avalanche photodiodes
    Hasnain, G
    Bi, WG
    Song, S
    Anderson, JT
    Moll, N
    Su, CY
    Hollenhorst, JN
    Baynes, ND
    Athroll, I
    Amos, S
    Ash, RM
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (12) : 2321 - 2326
  • [4] Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts
    Kim, M. D.
    Baek, J. M.
    Kim, T. G.
    Kim, S. G.
    Chung, K. S.
    [J]. THIN SOLID FILMS, 2006, 514 (1-2) : 250 - 253
  • [5] A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION
    LIU, Y
    FORREST, SR
    HLADKY, J
    LANGE, MJ
    ACKLEY, DE
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (02) : 182 - 193
  • [6] Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: current performance
    Ribordy, G
    Gisin, N
    Guinnard, O
    Stucki, D
    Wegmuller, M
    Zbinden, H
    [J]. JOURNAL OF MODERN OPTICS, 2004, 51 (9-10) : 1381 - 1398
  • [7] SURFACE DEGRADATION MECHANISM OF INP/INGAAS APDS
    SUDO, H
    SUZUKI, M
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (10) : 1496 - 1501
  • [8] Single photon counting at telecom wavelength and quantum key distribution
    Trifonov, A
    Subacius, D
    Berzanskis, A
    Zavriyev, A
    [J]. JOURNAL OF MODERN OPTICS, 2004, 51 (9-10) : 1399 - 1415
  • [9] InGaAs single photon avalanche detector with ultralow excess noise
    Zhao, Kai
    Zhang, Arthur
    Lo, Yu-Hwa
    Farr, William
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (08)
  • [10] Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector
    Zhao, Kai
    You, Sifang
    Cheng, James
    Lo, Yu-hwa
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (15)