Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

被引：22

作者：

Cheng, James ^{[1
]}

You, Sifang ^{[2
]}

Rahman, Samia ^{[1
]}

Lo, Yu-Hwa ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 16期

关键词：

FLOATING GUARD RING; PHOTODIODES; JUNCTION;

D O I：

10.1364/OE.19.015149

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22 mu m diameter device. (C) 2011 Optical Society of America

引用

页码：15149 / 15154

页数：6

共 10 条

[1] Self-Quenched InGaAs Single-Photon Detector [J].

Cheng, James ;

You, Sifang ;

Zhao, Kai ;

Lo, Yuhwa .

ADVANCED PHOTON COUNTING TECHNIQUES III, 2009, 7320

[2] Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode [J].

Cho, SR ;

Yang, SK ;

Ma, JA ;

Lee, SD ;

Yu, JS ;

Choo, AG ;

Kim, TI ;

Burm, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (05) :534-536

[3] Buried-mesa avalanche photodiodes [J].

Hasnain, G ;

Bi, WG ;

Song, S ;

Anderson, JT ;

Moll, N ;

Su, CY ;

Hollenhorst, JN ;

Baynes, ND ;

Athroll, I ;

Amos, S ;

Ash, RM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (12) :2321-2326

[4] Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts [J].

Kim, M. D. ;

Baek, J. M. ;

Kim, T. G. ;

Kim, S. G. ;

Chung, K. S. .

THIN SOLID FILMS, 2006, 514 (1-2) :250-253

[5] A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION [J].

LIU, Y ;

FORREST, SR ;

HLADKY, J ;

LANGE, MJ ;

ACKLEY, DE .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (02) :182-193

[6] Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: current performance [J].

Ribordy, G ;

Gisin, N ;

Guinnard, O ;

Stucki, D ;

Wegmuller, M ;

Zbinden, H .

JOURNAL OF MODERN OPTICS, 2004, 51 (9-10) :1381-1398

[7] SURFACE DEGRADATION MECHANISM OF INP/INGAAS APDS [J].

SUDO, H ;

SUZUKI, M .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (10) :1496-1501

[8] Single photon counting at telecom wavelength and quantum key distribution [J].

Trifonov, A ;

Subacius, D ;

Berzanskis, A ;

Zavriyev, A .

JOURNAL OF MODERN OPTICS, 2004, 51 (9-10) :1399-1415

[9] InGaAs single photon avalanche detector with ultralow excess noise [J].

Zhao, Kai ;

Zhang, Arthur ;

Lo, Yu-Hwa ;

Farr, William .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[10] Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector [J].

Zhao, Kai ;

You, Sifang ;

Cheng, James ;

Lo, Yu-hwa .

APPLIED PHYSICS LETTERS, 2008, 93 (15)

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