Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons

被引：38
作者：
Betti, Alessandro [1 ]
Fiori, Gianluca [1 ]
Iannaccone, Giuseppe [1 ]
机构：
[1] Univ Pisa, Dipartimento Ingn Informaz, I-56100 Pisa, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期
关键词：
Defects; edge roughness; graphene nanoribbons; impurities; low-field mobility; phonons; scattering; LIMITED MOBILITY; CONDUCTION;
D O I：
10.1109/TED.2010.2100045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the main scattering mechanisms affecting the mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects the mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared with the few experiments available in the literature.
引用
收藏
页码：2824 / 2830
页数：7
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