Growth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputtering

被引：1

作者：

Mazon, T ^{[1
]}

Joanni, E

Fernandes, JRA

Zaghete, MA

Cilense, M

Varela, JA

机构：

[1] Univ Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil

[2] Univ Tras os Montes & Alto Douro, UTAD, Dept Fis, P-5001911 Vila Real, Portugal

[3] UNESC Porto, Unidade Optoelect & Sistemas Elect, P-4169007 Oporto, Portugal

来源：

FERROELECTRICS | 2003年 / 293卷

关键词：

BaBi2Nb2O9; thin films; dielectric properties; RF-magnetron sputtering;

D O I：

10.1080/00150190390238405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The RF-magnetron sputtering technique has been used to deposit polycrystalline thin films of layered-structured ferroelectric BaBi2Nb2O9 (BBN). The XRD patterns for the films annealed at 700degreesC for 1 hour show the presence of the BBN phase as well as the BaNb2O6 secondary phase. A better crystallization of the BBN phase and an inhibition of the secondary phase is obtained with the increase of temperature. The surface of the prepared films was rather dense and smooth with no cracks. The 300 nm thick BBN thin films exhibited a room-temperature dielectric constant of about 779 with a dissipation factor of 0.09 at a frequency of 100 kHz.

引用

页码：201 / 207

页数：7

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