Characterization of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si

被引：3

作者：

Lombardo, S ^{[1
]}

Raineri, V ^{[1
]}

Portoghese, R ^{[1
]}

Campisano, SU ^{[1
]}

Pinto, A ^{[1
]}

LaRosa, G ^{[1
]}

Ward, P ^{[1
]}

机构：

[1] SGS THOMSON MICROELECT, I-95121 CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00502-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Epitaxial Si/GexSi1-x heterojunctions were formed by high dose Ge ion implantation in Si followed by rapid thermal annealing at 1000 degrees C for 10 s. This technique was adopted to fabricate Si/GexSi1-x heterojunction n-p-n bipolar transistors (HBT) using a self-aligned, double polycrystalline silicon process commonly used for fast Si bipolar transistors. The devices are characterized by a 60 nm wide neutral base with a Ge concentration peak of approximate to 7 at.% at the base-collector junction. Good static and dynamic electrical characteristics are demonstrated and discussed.

引用

页码：169 / 172

页数：4

共 19 条

[1]

ASHBURN P, 1993, ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, P301

[2]

Beadle W. E., 1985, QUICK REFERENCE MANU

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].