A GaNHEMT power amplifier with variable gate bias for envelope and phase signals

被引：0

作者：

Cijvat, Ellie ^{[1
]}

Tom, Kevin ^{[2
,3
]}

Faulkner, Mike ^{[2
,3
]}

Sjoeland, Henrik ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, POB 118, SE-22100 Lund, Sweden

[2] Victoria Univ, CTME, Melbourne, Vic 8001, Australia

[3] MCMC, Melbourne, Vic 8001, Australia

来源：

2007 NORCHIP | 2007年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEW power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.

引用

页码：108 / +

页数：2

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