Revealing the planar chemistry of two-dimensional heterostructures at the atomic level

被引:69
作者
Chou, Harry [1 ,2 ]
Ismach, Ariel [1 ,3 ]
Ghosh, Rudresh [2 ]
Ruoff, Rodney S. [1 ,4 ]
Dolocan, Andrei [5 ]
机构
[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA
[2] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[3] Tel Aviv Univ, Dept Mat Sci & Engn, IL-6997801 Ramat Aviv, Israel
[4] Ulsan Natl Inst Sci & Technol, Inst Basic Sci Ctr, Ctr Multidimens Carbon Mat, Ulsan 689798, South Korea
[5] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA
来源
NATURE COMMUNICATIONS | 2015年 / 6卷
关键词
HEXAGONAL BORON-NITRIDE; GRAPHENE FILMS; HIGH-QUALITY; SPECTROSCOPY; DEVICES; ELECTRONICS; DEPOSITION; GROWTH; COPPER;
D O I
10.1038/ncomms8482
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices.
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页数:7
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共 28 条
  • [1] Production and processing of graphene and 2d crystals
    Bonaccorso, Francesco
    Lombardo, Antonio
    Hasan, Tawfique
    Sun, Zhipei
    Colombo, Luigi
    Ferrari, Andrea C.
    [J]. MATERIALS TODAY, 2012, 15 (12) : 564 - 589
  • [2] Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
    Butler, Sheneve Z.
    Hollen, Shawna M.
    Cao, Linyou
    Cui, Yi
    Gupta, Jay A.
    Gutierrez, Humberto R.
    Heinz, Tony F.
    Hong, Seung Sae
    Huang, Jiaxing
    Ismach, Ariel F.
    Johnston-Halperin, Ezekiel
    Kuno, Masaru
    Plashnitsa, Vladimir V.
    Robinson, Richard D.
    Ruoff, Rodney S.
    Salahuddin, Sayeef
    Shan, Jie
    Shi, Li
    Spencer, Michael G.
    Terrones, Mauricio
    Windl, Wolfgang
    Goldberger, Joshua E.
    [J]. ACS NANO, 2013, 7 (04) : 2898 - 2926
  • [3] Intrinsic and extrinsic performance limits of graphene devices on SiO2
    Chen, Jian-Hao
    Jang, Chaun
    Xiao, Shudong
    Ishigami, Masa
    Fuhrer, Michael S.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
  • [4] Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/NCHEM.1589, 10.1038/nchem.1589]
  • [5] Boron nitride substrates for high-quality graphene electronics
    Dean, C. R.
    Young, A. F.
    Meric, I.
    Lee, C.
    Wang, L.
    Sorgenfrei, S.
    Watanabe, K.
    Taniguchi, T.
    Kim, P.
    Shepard, K. L.
    Hone, J.
    [J]. NATURE NANOTECHNOLOGY, 2010, 5 (10) : 722 - 726
  • [6] Bose-Einstein condensation of excitons in bilayer electron systems
    Eisenstein, JP
    MacDonald, AH
    [J]. NATURE, 2004, 432 (7018) : 691 - 694
  • [7] Atomic Interdiffusion and Diffusive Stabilization of Cobalt by Copper During Atomic Layer Deposition from Bis(N-tert-butyl-N′-ethylpropionamidinato) Cobalt(II)
    Elko-Hansen, Tyler D. -M.
    Dolocan, Andrei
    Ekerdt, John G.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (07): : 1091 - 1095
  • [8] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [9] Raman spectroscopy as a versatile tool for studying the properties of graphene
    Ferrari, Andrea C.
    Basko, Denis M.
    [J]. NATURE NANOTECHNOLOGY, 2013, 8 (04) : 235 - 246
  • [10] Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices
    Garcia, Andrei G. F.
    Neumann, Michael
    Amet, Francois
    Williams, James R.
    Watanabe, Kenji
    Taniguchi, Takashi
    Goldhaber-Gordon, David
    [J]. NANO LETTERS, 2012, 12 (09) : 4449 - 4454