GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

被引：75
作者：
Nakao, M
Oku, S
Tamamura, T
Yasui, K
Masuda, H
机构：
[1] NTT, Optoelect Labs, Atsugi, Kanagawa 2430198, Japan
[2] Tokyo Metropolitan Univ, Fac Engn, Dept Appl Chem, Tokyo 1920300, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
porous alumina membrane; hole array; RBE mask; GaAs; InP; 2-D photonic crystal;
D O I：
10.1143/JJAP.38.1052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nano channel pattern into III-V semiconductors. The alumina mask showed high tolerance to RBE using a Br-2/N-2 mixed gas system. GaAs and InP nanohole arrays with a high aspect ratio and with diameter uniformity of 2% which was as good as that of the alumina mask, were obtained.
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收藏
页码：1052 / 1055
页数：4
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