Circuit modelling of optical bistability in an external cavity semiconductor laser

被引：0

作者：

Madhan, MG ^{[1
]}

Gunasekaran, N

Vaya, PR

机构：

[1] Anna Univ, Coll Engn, Sch Elect & Commun Engn, Madras 600025, Tamil Nadu, India

[2] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

INTERNATIONAL JOURNAL OF OPTOELECTRONICS | 1998年 / 12卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A circuit model for an external cavity semiconductor laser, which includes gain and absorber elements, is developed from the rate equations. The effects of the absorber element's gain and threshold current density on the device performance are studied. The hysteresis effects and switching performance are investigated by simulation of the equivalent circuit model.

引用

页码：99 / 104

页数：6

共 6 条

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