Pushing p-type conductivity in ZnO by (Zr, N) codoping: A first-principles study

被引：33

作者：

Duan, Xin-Ying ^{[1
]}

Zhao, Yu-Jun ^{[1
]}

Yao, Ruo-He ^{[1
]}

机构：

[1] S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 147卷 / 5-6期

关键词：

semiconductors; impurities in semiconductors; electronic band structure;

D O I：

10.1016/j.ssc.2008.05.027

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zr mono-doped and (Zr, N) co-doped ZnO are investigated by the first-principles calculations. It is found that Zr prefers to substitute Zn site under most growth conditions. The passive (N-Zr-N) complexes create a fully Occupied impurity band above the valence-band maximum (VBM) of ZnO, which helps p-type conductivity by reducing the ionization energy, consistent with a new approach to overcome the doping asymmetry [Y.F. Yan, J.B. Li, S.H. Wei, and M.M. Al-Jassim, Phys. Rev. Lett. 98 (2007) 135506]. In comparison with (Ga, N) co-doping, (Zr, N) is found to be probably better dopants to push p-type conductivity in ZnO through the new approach with easier formation of the passive impurity band. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：194 / 197

页数：4

共 23 条

[11] Pulsed-laser-deposited p-type ZnO films with phosphorus doping -: art. no. 043519 [J].

Vaithianathan, V ;

Lee, BT ;

Kim, SS .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)

[12] Preparation of As-doped p-type ZnO films using a Zn3As2/ZnO target with pulsed laser deposition -: art. no. 062101 [J].

Vaithianathan, V ;

Lee, BT ;

Kim, SS .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

[13] Cluster-doping approach for wide-gap semiconductors:: The case of p-type ZnO -: art. no. 256401 [J].

Wang, LG ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4

[14] Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe [J].

Wei, SH ;

Zhang, SB .

PHYSICAL REVIEW B, 2002, 66 (15) :1-10

[15] High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy -: art. no. 152101 [J].

Xiu, FX ;

Yang, Z ;

Mandalapu, LJ ;

Zhao, DT ;

Liu, JL ;

Beyermann, WP .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[16] Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source [J].

Xu, WZ ;

Ye, ZZ ;

Zhou, T ;

Zhao, BH ;

Zhu, LP ;

Huang, JY .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) :133-136

[17] Unipolarity of ZnO with a wide-band gap and its solution using codoping method [J].

Yamamoto, T ;

Katayama-Yoshida, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :552-555

[18] Doping asymmetry in wide-bandgap semiconductors: Origins and solutions [J].

Yan, Yanfa ;

Wei, Su-Huai .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (04) :641-652

[19] Possible approach to overcome the doping asymmetry in wideband gap semiconductors [J].

Yan, Yanfa ;

Li, Jingbo ;

Wei, Su-Huai ;

Al-Jassim, M. M. .

PHYSICAL REVIEW LETTERS, 2007, 98 (13)

[20] Control of conduction type in Al- and N-codoped ZnO thin films [J].

Yuan, GD ;

Ye, ZZ ;

Zhu, LP ;

Qian, Q ;

Zhao, BH ;

Fan, RX ;

Perkins, CL ;

Zhang, SB .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

← 1 2 3 →