Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

被引：57

作者：

Samanta, Subhranu ^{[1
]}

Chand, Umesh ^{[1
]}

Xu, Shengqiang ^{[1
]}

Han, Kaizhen ^{[1
]}

Wu, Ying ^{[1
]}

Wang, Chengkuan ^{[1
]}

Kumar, Annie ^{[1
]}

Velluri, Hasita ^{[1
]}

Li, Yida ^{[1
]}

Fong, Xuanyao ^{[1
]}

Thean, Aaron Voon-Yew ^{[1
]}

Gong, Xiao ^{[1
]}

机构：

[1] Natl Univ Singapore, Elect & Comp Engn, Singapore 117582, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 06期

关键词：

a-IGZO; TFT; subthreshold swing; effective mobility; uniformity; DEVICES;

D O I：

10.1109/LED.2020.2985787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility (mu(eff)) of 55.3cm(2)/V center dot s at an inversion carrier density (N-inv) of 5 x 10(12) cm(-2), and large I-ON/I-OFF of >10(9). Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (G(m,max)) measured from 20 pristine TFT devices. This a-IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).

引用

页码：856 / 859

页数：4

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