EPITAXIAL GROWTH OF TERNARY Cu-In-Se FILM SYSTEM

被引：0
|
作者：
Grigorov, S. N. [1 ]
Taran, A. V. [1 ]
机构：
[1] Kharkov Phys Tech Inst, Natl Sci Ctr, Kharkov, Ukraine
来源：
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2011年 / 06期
关键词：
D O I：
暂无
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
beta-CIS epitaxial films were gown on (001) KCl surface with PbS sublayer at 400 degrees C. There were revealed the beta-CIS and beta- + gamma-CIS zones, corresponding to Cu2Se-In2Se3 pseudo-binary phase diagram. beta-CIS crystallites revealed microtwins on (112) planes and two-dimensional defects on (100). The nature of such two-dimensional defects can be explained as a shift in the (001) beta-CIS plane by a vector R = 1/2[110]. As a result, an antiphase boundary appears along the (100) and (010) planes and stacking faults along (001) planes.
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页码：141 / 144
页数：4
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