EPITAXIAL GROWTH OF TERNARY Cu-In-Se FILM SYSTEM

被引：0

作者：

Grigorov, S. N. ^{[1
]}

Taran, A. V. ^{[1
]}

机构：

[1] Kharkov Phys Tech Inst, Natl Sci Ctr, Kharkov, Ukraine

来源：

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2011年 / 06期

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

beta-CIS epitaxial films were gown on (001) KCl surface with PbS sublayer at 400 degrees C. There were revealed the beta-CIS and beta- + gamma-CIS zones, corresponding to Cu2Se-In2Se3 pseudo-binary phase diagram. beta-CIS crystallites revealed microtwins on (112) planes and two-dimensional defects on (100). The nature of such two-dimensional defects can be explained as a shift in the (001) beta-CIS plane by a vector R = 1/2[110]. As a result, an antiphase boundary appears along the (100) and (010) planes and stacking faults along (001) planes.

引用

页码：141 / 144

页数：4

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