On electron transfer in Langmuir-Blodgett films

被引：10

作者：

Egorov, VV

机构：

[1] Photochemistry Department, Institute of Chemical Physics, Russian Academy of Sciences, Moscow 117977

来源：

THIN SOLID FILMS | 1996年 / 284卷 / 284-285期

关键词：

electron transfer; Langmuir-Blodgett films;

D O I：

10.1016/S0040-6090(95)08483-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental temperature dependences of the rate constant and activation energy obtained recently For electron transfer in Langmuir-Blodgett film devices are treated in terms of a new theoretical approach in which a failure of the Born-Oppenhsimer and Franck-Condon approximations, and the effects of the large number of tunnel and over-barrier transitions are of paramount importance.

引用

页码：932 / 935

页数：4

共 18 条

[1] FAILURE OF THE BORN-OPPENHEIMER AND FRANCK-CONDON APPROXIMATIONS FOR LONG-DISTANCE ELECTRON-TRANSFER RATE CALCULATIONS [J].