Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B2H6 and NH3

被引：10
作者：
Bansal, Anushka [1 ]
Zhang, Xiaotian [1 ]
Redwing, Joan M. [1 ,2 ]
机构：
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, 2 Dimens Crystal Consortium 2DCC Mat Res Inst, University Pk, PA 16802 USA
来源：
JOURNAL OF MATERIALS RESEARCH | 2021年 / 36卷 / 23期
基金：
美国国家科学基金会;
关键词：
2D materials; Chemical vapor deposition (CVD) (deposition); Epitaxy; III-V; Dielectric; EPITAXIAL-GROWTH; FLOW-RATE; FILMS; TEMPERATURE; SUBSTRATE; EMISSION; DIBORANE; LAYER;
D O I：
10.1557/s43578-021-00446-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemical vapor deposition (CVD) of hexagonal boron nitride (hBN) using diborane (B2H6) and ammonia (NH3) is reported. The effect of growth conditions on hBN growth rate using continuous vs. flow modulation epitaxy (FME) method is investigated to gain insight into the role of gas-phase chemistry during film deposition. In continuous mode, hBN growth rate decreases with increase in growth temperature, reactor pressure, and decrease in gas velocity. This is attributed to increased gas-phase polymerization of intermediate products such as borazine (B3N3H6) which forms high molecular weight species that do not contribute to hBN film growth. Using FME method, the hBN growth rate increases by similar to 25 times compared to continuous mode and exhibits a strong positive dependence on substrate temperature with an activation energy of similar to 61.1 kcal/mol, indicative of a kinetically limited process. The results provide additional insight into the effects of gas-phase reactions on CVD of hBN.
引用
收藏
页码：4678 / 4687
页数：10
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