Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts

被引：232

作者：

Li, Liang ^{[1
]}

Auer, Erwin ^{[2
]}

Liao, Meiyong ^{[3
]}

Fang, Xiaosheng ^{[1
]}

Zhai, Tianyou ^{[1
]}

Gautam, Ujjal K. ^{[1
]}

Lugstein, Alois ^{[2
]}

Koide, Yasuo ^{[3
]}

Bando, Yoshio ^{[1
]}

Golberg, Dmitri ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[3] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

NANOSCALE | 2011年 / 3卷 / 03期

关键词：

PHOTORESPONSE PROPERTIES; PHOTODETECTORS; NANOWIRES; GROWTH; NANOSTRUCTURES; NANORIBBONS;

D O I：

10.1039/c0nr00702a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches.

引用

页码：1120 / 1126

页数：7

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