Non-linearity of diffusion in amorphous Si-Ge multilayers

被引:13
作者
Csik, A [1 ]
Beke, DL [1 ]
Langer, GA [1 ]
Erdelyi, Z [1 ]
Daróczi, L [1 ]
Kapta, K [1 ]
Kis-Varga, M [1 ]
机构
[1] Univ Debrecen, Dept Solid State Phys, H-4100 Debrecen, Hungary
关键词
Si-Ge amorphous multilayers; interdiffusion; X-ray diffraction; RBS;
D O I
10.1016/S0042-207X(01)00133-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Compositionally modulated amorphous Si-Ge thin films with repeat lengths between 2.5 and 9 nm have been prepared using magnetron sputtering. The interdiffusion coefficient (D) was determined from the change in the small angle X-ray diffraction satellite (SAXRD) intensities. Experimental results confirm the theoretically predicted strong concentration dependence of the interdiffusion coefficient. It is illustrated that it is possible to determine the concentration dependence of D from one (curved) decay plot of SAXRB intensities as well as from Rutherford backscattering measurements. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:297 / 301
页数:5
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