Nitride-based 2DEG photodetectors with a large AC responsivity

被引：16

作者：

Chang, SJ ^{[1
]}

Kuan, TM

Ko, CH

Su, YK

Webb, JB

Bardwell, JA

Liu, Y

Tang, H

Lin, WJ

Cherng, YT

Lan, WH

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Chung Shan Inst Sci & Technol, Mat R&D Ctr, Taoyuan 325, Taiwan

[4] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 11期

关键词：

GaN; MOVPE; 2DEG; photodetector;

D O I：

10.1016/S0038-1101(03)00246-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 x 10(6) A/W. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2023 / 2026

页数：4

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