Effect of Li doping on the structural, optical and formaldehyde sensing properties of In2O3 thin films

被引:27
作者
Pramod, N. G. [1 ]
Pandey, S. N. [2 ]
机构
[1] S Nijalingappa Coll, Dept Phys, Bangalore 560010, Karnataka, India
[2] Motilal Nehru Natl Inst Technol, Dept Phys, Allahabad 211004, Uttar Pradesh, India
关键词
In2O3 thin film; Spray pyrolysis; Li-doping; Formaldehyde sensor; CHEMICAL SPRAY-PYROLYSIS; INDIUM OXIDE-FILMS; GAS SENSORS; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; FABRICATION; GROWTH; EVAPORATION; DEPOSITION; PRECURSOR;
D O I
10.1016/j.ceramint.2014.08.101
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Chemical spray pyrolysis technique is utilized to deposit undoped and Li-doped indium oxide thin films on cleaned glass substrates. The effect of Li doping on the structural, optical, electrical and formaldehyde sensing characteristics on In2O3 has been studied. All the thin film samples were characterized by X-ray diffraction for structural and UV-vis spectroscopy for optical analyses, respectively. The doping of Li into In2O3 reduces the value of the average crystallite size and the optical transmittance in the visible region. However, a blue shift is observed in the optical band gap in the Li-doped films. The value of the direct optical band gap is found to increase from 3.35 eV in the undoped sample to 3.59 eV in the 2 at.% Li:In2O3 thin film. Further, the undoped and the Li-doped films have been tested for formaldehyde vapor to check their suitability to detect the presence of the same in air. We observed that the 2 at.% Li:In2O3 film exhibits the highest sensitivity for formaldehyde at a low concentration of 60 ppm and at an operating temperature of 300 degrees C. The sensing mechanism of formaldehyde vapor has also been presented. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:527 / 532
页数:6
相关论文
共 30 条
[1]   Influence of substrate temperature on the properties of indium oxide thin films [J].
Adurodija, FO ;
Izumi, H ;
Ishihara, T ;
Yoshioka, H ;
Motoyama, M ;
Murai, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (03) :814-818
[2]   Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis [J].
Benamar, E ;
Rami, M ;
Messaoudi, C ;
Sayah, D ;
Ennaoui, A .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 56 (02) :125-139
[3]   The fabrication and gas-sensing characteristics of the formaldehyde gas sensors with high sensitivity [J].
Chen, T. ;
Liu, Q. J. ;
Zhou, Z. L. ;
Wang, Y. D. .
SENSORS AND ACTUATORS B-CHEMICAL, 2008, 131 (01) :301-305
[4]   A high sensitivity gas sensor for formaldehyde based on CdO and In2O3 doped nanocrystalline SnO2 [J].
Chen, T. ;
Liu, Q. J. ;
Zhou, Z. L. ;
Wang, Y. D. .
NANOTECHNOLOGY, 2008, 19 (09)
[5]   Preparation of indium oxide thin film by spin-coating method and its gas-sensing properties [J].
Chung, WY ;
Sakai, G ;
Shimanoe, K ;
Miura, N ;
Lee, DD ;
Yamazoe, N .
SENSORS AND ACTUATORS B-CHEMICAL, 1998, 46 (02) :139-145
[6]   Fabrication and characterization of ITO thin films deposited by excimer laser evaporation [J].
Coutal, C ;
Azema, A ;
Roustan, JC .
THIN SOLID FILMS, 1996, 288 (1-2) :248-253
[7]   NiO thin-film formaldehyde gas sensor [J].
Dirksen, JA ;
Duval, K ;
Ring, TA .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 80 (02) :106-115
[8]   Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells [J].
El Hichou, A. ;
Addou, M. ;
Mansori, M. ;
Ebothe, J. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (05) :609-612
[9]   Experimental and theoretical studies of indium oxide gas sensors fabricated by spray pyrolysis [J].
Golovanov, V ;
Mäki-Jaskari, MA ;
Rantala, TT ;
Korotcenkov, G ;
Brinzari, V ;
Cornet, A ;
Morante, J .
SENSORS AND ACTUATORS B-CHEMICAL, 2005, 106 (02) :563-571
[10]   CdO activated Sn-doped ZnO for highly sensitive, selective and stable formaldehyde sensor [J].
Han, Ning ;
Wu, Xiaofeng ;
Zhang, Dangwen ;
Shen, Genli ;
Liu, Haidi ;
Chen, Yunfa .
SENSORS AND ACTUATORS B-CHEMICAL, 2011, 152 (02) :324-329