Electronic structure and optical properties of zinc-blende GaN quantum dots

被引：0

作者：

Feng, DH ^{[1
]}

Jia, TQ

Xu, ZZ

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China

[2] Zhongshan Univ, State Key Lab Opt & Elect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

CHINESE PHYSICS | 2003年 / 12卷 / 09期

关键词：

electronic structure; GaN; quantum dots; optical properties;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.

引用

页码：1016 / 1020

页数：5

共 28 条

[1]

ADACHI S, 1999, OPTICAL CONSTANTS CR, P189

[2] Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin-orbit coupling [J].