Analysis of linear energy transfer effects on the scintillation properties of Bi4Ge3O12 crystals

被引：6

作者：

Koshimizu, Masanori ^{[1
]}

Kurashima, Satoshi ^{[2
]}

Kimura, Atsushi ^{[2
]}

Taguchi, Mitsumasa ^{[2
]}

Yanagida, Takayuki ^{[3
]}

Fujimoto, Yutaka ^{[1
]}

Asai, Keisuke ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Chem, Aoba Ku, 6-6-07 Aoba, Sendai, Miyagi 9808579, Japan

[2] Natl Inst Quantum & Radiol Sci & Technol, Takasaki Adv Radiat Res Inst, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 409卷

关键词：

Linear energy transfer; Scintillator; BGO; Excitation density; Quench; ELECTRON-HOLE PLASMA; BEAM PULSE-RADIOLYSIS; ION IRRADIATION; FAST LUMINESCENCE; DECAY; EMISSION; SPECTRA; TRACKS; CORE;

D O I：

10.1016/j.nimb.2017.04.010

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We analyzed the linear energy transfer (LET; energy deposited onto the target per unit length) effects on the scintillation properties of Bi4Ge3O12 (BGO) with an emphasis on the dynamical aspect. We irradiated BGO with 20 MeV H-+/-, 50 MeV Hey, and 220 MeV C5(+/-). We observed that the rise and the decay of the scintillation temporal profiles are faster at higher LET. The faster decay at higher LET is attributed to the competition between the radiative transition of self -trapped excitons (STEs) localized at Bi3+ ions and the quenching caused by the interaction between STEs. The faster rise can be explained in terms of the competition between the quenching caused by the interaction between excited states and the formation of the STEs. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：19 / 22

页数：4

共 25 条

[1] Scintillation studies of Bi4Ge3O12 (BGO) down to a temperature of 6 K
Gironnet, J.
Mikhailik, V. B.
Kraus, H.
de Marcillac, P.
Coron, N.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 594 (03) : 358 - 361
[2] Luminescence decay of PbWO4 crystals under different excitation conditions
Itoh, M
Horimoto, M
Fujita, M
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (02) : 193 - 201
[3] Photo-stimulated luminescence and photo-induced infrared absorption in ZnWO4
Itoh, Minoru
Katagiri, Tsuyoshi
Aoki, Tomonori
Fujita, Masarni
[J]. RADIATION MEASUREMENTS, 2007, 42 (4-5) : 545 - 548
[4] Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations
Itoh, Minoru
Katagiri, Tsuyoshi
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2010, 79 (07)
[5] Decay enhancement of self-trapped excitons at high density and low temperature in an ion-irradiated BaF2 single crystal
Kimura, K
Hong, W
[J]. PHYSICAL REVIEW B, 1998, 58 (10): : 6081 - 6089
[6] EXCITATION-DENSITY-DEPENDENT COMPETITION BETWEEN RADIATIVE AND NONRADIATIVE ANNIHILATIONS OF CORE HOLES PRODUCED BY ION IRRADIATION OF A SINGLE-CRYSTALLINE BAF2
KIMURA, K
WADA, J
[J]. PHYSICAL REVIEW B, 1993, 48 (21): : 15535 - 15539
[7] Fast electron-hole plasma luminescence from track-cores in heavy-ion irradiated wide-band-gap crystals
Kimura, K
Sharma, S
Popov, A
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 191 : 48 - 53
[8] MEASUREMENT OF THE DECAY AND TIME-RESOLVED SPECTRA OF THE EMISSION FROM SIGMA-EXCITONS IN KBR IN THE NANOSECOND RANGE, PRODUCED BY HEAVY-ION IRRADIATION
KIMURA, K
MOCHIZUKI, K
FUJISAWA, T
IMAMURA, M
[J]. PHYSICS LETTERS A, 1980, 78 (01) : 108 - 110
[9] Novel ultra-fast luminescence from incipient ion tracks of insulator crystals: electron-hole plasma formation in the track core
Kimura, K
Sharma, S
Popov, AI
[J]. RADIATION MEASUREMENTS, 2001, 34 (1-6) : 99 - 103
[10] Stimulated emission at 326 nm and an ultrafast 100-ps-lived luminescence component by ion irradiation of α-alumina
Kimura, K
Kaneko, J
Sharma, S
Hong, W
Itoh, N
[J]. PHYSICAL REVIEW B, 1999, 60 (18): : 12626 - 12634

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