Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

被引：27

作者：

Feng, Q. J. ^{[1
,2
]}

Hu, L. Z. ^{[1
]}

Liang, H. W. ^{[1
]}

Feng, Y. ^{[1
]}

Wang, J. ^{[2
]}

Sun, J. C. ^{[2
]}

Zhao, J. Z. ^{[1
]}

Li, M. K. ^{[2
]}

Dong, L. ^{[3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

[3] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450052, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 03期

关键词：

ZnO nanowires; Arsenic; Chemical vapor deposition; Photoluminescence; THIN-FILMS; OPTICAL-PROPERTIES; EPITAXY;

D O I：

10.1016/j.apsusc.2010.08.018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO nanowires with different arsenic concentration were grown on Si (100) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：1084 / 1087

页数：4

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