Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

被引:27
作者
Feng, Q. J. [1 ,2 ]
Hu, L. Z. [1 ]
Liang, H. W. [1 ]
Feng, Y. [1 ]
Wang, J. [2 ]
Sun, J. C. [2 ]
Zhao, J. Z. [1 ]
Li, M. K. [2 ]
Dong, L. [3 ]
机构
[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China
[3] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450052, Peoples R China
关键词
ZnO nanowires; Arsenic; Chemical vapor deposition; Photoluminescence; THIN-FILMS; OPTICAL-PROPERTIES; EPITAXY;
D O I
10.1016/j.apsusc.2010.08.018
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO nanowires with different arsenic concentration were grown on Si (100) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:1084 / 1087
页数:4
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