Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs

被引：6

作者：

Yoo, Juhn Suk

Lee, Hojin

Kanicki, Jerzy

Kim, Chang-Dong

Chung, In-Jae

机构：

[1] LG Philips LCD, R&D Ctr, Anyang 431080, Gyeonggi Do, South Korea

[2] Univ Michigan, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2007年 / 15卷 / 08期

关键词：

AMOLED; a-Si : H; TFT; pixel circuit; reliability; THIN-FILM TRANSISTORS; DISPLAYS;

D O I：

10.1889/1.2770853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel pixel circuit for electrically stable AMOLEDs with an a-Si: H TFT backplane and top-anode organic light-emitting diode is reported. The proposed pixel circuit is composed of five a-Si: H TFTs, and it does not require any complicated drive ICs. The OLED current compensation for drive TFT threshold voltage variation has been verified using SPICE simulations.

引用

页码：545 / 551

页数：7

共 13 条

[1]

Byun YH, 1996, IEEE T ELECTRON DEV, V43, P839, DOI 10.1109/16.491263

[2]

*CAD DES SYST INC, 2004, VIRT SPECTR CIRC SIM

[3] Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays [J].

Kim, BK ;

Kim, O ;

Chung, HJ ;

Chang, JW ;

Ha, YM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4A) :L482-L485

[4]

KUO A, 2006, AMFPD

[5]

MIWA K, 2004, INFORM DISPLAY, V1, P16

[6]

NATHAN A, 2004, SID S, V35, P1508

[7] THE PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2753-2763

[8] Accelerated stress testing of a-Si:H pixel circuits for AMOLED displays [J].

Sakariya, K ;

Ng, CKM ;

Servati, P ;

Nathan, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2577-2583

[9]

SANFORD J, 2003, C REC IDRC, P41

[10]

Sanford J.L., 2003, SID Symp. Dig. Tech. Pap, V34, P10, DOI [10.1889/1.1832194, DOI 10.1889/1.1832194]

← 1 2 →