Magnetoresistance measurements of different geometries on epitaxial InP and GaInAs/InP layers

被引：0
|
作者：
Somogyi, K [1 ]
机构：
[1] HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1047 BUDAPEST,HUNGARY
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：711 / 711
页数：1
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