Tunnel Magnetoresistance above 170% and Resistance-Area Product of 1 Ω (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier

被引：54

作者：

Maehara, Hiroki ^{[1
,2
,3
]}

Nishimura, Kazumasa ^{[2
,3
]}

Nagamine, Yoshinori ^{[2
,3
]}

Tsunekawa, Koji ^{[2
,3
]}

Seki, Takayuki ^{[1
,4
]}

Kubota, Hitoshi ^{[1
,3
]}

Fukushima, Akio ^{[1
,3
]}

Yakushiji, Kay ^{[1
,3
]}

Ando, Koji ^{[1
]}

Yuasa, Shinji ^{[1
,3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Canon ANELVA Corp, Proc Dev Ctr, Kawasaki, Kanagawa 2158550, Japan

[3] Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 03期

关键词：

ROOM-TEMPERATURE; JUNCTIONS;

D O I：

10.1143/APEX.4.033002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) prepared by sputtering deposition and in situ annealing exhibited a high magnetoresistance (MR) ratio (above 170%) and an ultra-low resistance-area (RA) product [about 1.0 Omega (mu m)(2)]. The MgO barrier, which was about 1 nm thick, was initially amorphous. In situ annealing of the barrier at 300 degrees C promoted crystallization of the MgO with (001) orientation, which resulted in the high MR ratio at the ultra-low RA product. The present achievements will enable the development of highly sensitive tunnel magnetoresistive (TMR) read heads for hard disk drives with a recording density of about 1 Tbit/in.(2). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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