Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity

被引：42

作者：

Deuermeier, Jonas ^{[1
,2
]}

Liu, Hongjun ^{[3
]}

Rapenne, Laetitia ^{[3
]}

Calmeiro, Tomas ^{[1
,2
]}

Renou, Gilles ^{[4
]}

Martins, Rodrigo ^{[1
,2
]}

Munoz-Rojas, David ^{[3
]}

Fortunato, Elvira ^{[1
,2
]}

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT I3N, Campus Caparica, P-2829516 Lisbon, Portugal

[2] Univ Nova Lisboa, CEMOP, Campus Caparica, P-2829516 Caparica, Portugal

[3] Univ Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France

[4] Univ Grenoble Alpes, CNRS, SIMAP, F-38042 St Martin Dheres, France

来源：

APL MATERIALS | 2018年 / 6卷 / 09期

基金：

欧盟地平线“2020”;

关键词：

CUPROUS-OXIDE; SEMICONDUCTORS; CONDUCTIVITY;

D O I：

10.1063/1.5042046

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Direct evidence for the presence of a CuO structure in the grain boundaries of Cu2O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu2O. The suppression of CuO formation at the Cu2O grain boundaries is identified as the key strategy for future device optimization. (C) 2018 Author(s).

引用

页数：6

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