Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency

被引：16

作者：

Armstrong, A. ^{[1
]}

Allerman, A. A. ^{[1
]}

Henry, T. A. ^{[1
]}

Crawford, M. H. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

DENSITY-DEPENDENCE; GAN; EMISSION;

D O I：

10.1063/1.3583448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of (Al)GaN/AlGaN multiquantum well (MQWs) optical efficiency and defect incorporation on the growth temperature (T(g)) of the optically active region was investigated. Marked increase in MQW photoluminescence (PL) intensity was observed for increasing T(g). Correspondingly, increasing T(g) also significantly reduced point defect incorporation under QW growth conditions, as determined by deep level optical spectroscopy. It is suggested that enhanced MQW PL with increasing T(g) resulted from improved nonradiative lifetime through reduced nonradiative defect density in the MQW region. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583448]

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页数：3

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