Laser Patterning of the Sb2O3 Atomic Thin Layer Assisted by Near Field Heating

被引：5
作者：
Zhang, Jundong [1 ]
Pan, Baojun [2 ]
Su, Weitao [1 ]
Zhang, Lijie [2 ]
Chen, Fei [3 ]
Lu, Hong-Wei [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Sci, Hangzhou 310018, Peoples R China
[2] Wenzhou Univ, Coll Chem & Mat Engn, Wenzhou 315201, Peoples R China
[3] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Peoples R China
来源：
ACS APPLIED NANO MATERIALS | 2022年 / 5卷 / 06期
关键词：
alpha-Sb2O3; alpha-Sb2O4; near field heating; transformation; laser patterning; Raman spectroscopy; HEXAGONAL BORON-NITRIDE; RAMAN-SCATTERING; PHASE-TRANSITIONS; PHOTOLUMINESCENCE; MOS2;
D O I：
10.1021/acsanm.2c00904
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
As an important member recently joining the family of two-dimensional dielectrics, the antimony oxide atomic thin layer exhibits extremely high dielectric constant and breakdown voltage, intriguing great enthusiasm to explore these novel physical properties for applications. Herein, transformation of chemical vapor deposition grown alpha-Sb2O3 flakes into alpha-Sb2O4 was achieved under ambient conditions using a near field heating effect provided by thin gold films. Flakes with a thickness of 4-42 nm can be fully transformed in 20 s with irradiation of a continuous-wave 532 nm laser. Such a short transformation time further allows laser patterning on alpha-Sb2O3 flakes with microscale spatial resolution. These results greatly enrich the knowledge of this novel 2D dielectric material and facilitate its application in atomic scale electronic devices.
引用
收藏
页码：7877 / 7884
页数：8
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