Local Gate Effect of Mechanically Deformed Crossed Carbon Nanotube Junction

被引：7

作者：

Qing, Quan ^{[2
]}

Nezich, Daniel A. ^{[4
]}

Kong, Jing ^{[3
]}

Wu, Zhongyun ^{[1
]}

Liu, Zhongfan ^{[1
]}

机构：

[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn,Ctr Nanoscale Sci & Technol, Beijing 100871, Peoples R China

[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[4] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

关键词：

Carbon nanotube; crossed-junction; localized charges; transconductance modulation; TRANSISTORS; PERFORMANCE; TRANSPORT;

D O I：

10.1021/nl103084j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we have demonstrated that the local deformation at the crossed carbon nanotube (CNT) junctions can introduce significant tunable local gate effect under ambient environment. Atomic force microscope (AFM) manipulation of the local deformation yielded a variation in transconductance that was retained after removing the AFM tip. Application of a large source drain voltage and pressing the CNT junction above a threshold pressure can respectively erase and recover the transconductance modulation reversibly. The local gate effect is found to be independent of the length of the crossed CNT and attributed to the charges residing at the deformed junctions due to formation of localized states. The number of localized charges is estimated to be in the range of 102 to 10(3). These results may rind potential applications in electromechanical sensors and could have important implications for designing nonvolatile devices based on crossed CNT junctions.

引用

页码：4715 / 4720

页数：6

共 23 条

[1] Crossed nanotube junctions [J].