Flicker Noise in N-type and P-type Silicon Nanowire Transistors

被引：0

作者：

Yang, Seungwon ^{[1
]}

Son, Younghwan ^{[1
]}

Suk, Sung Dae ^{[2
]}

Kim, Dong-Won ^{[2
]}

Park, Donggun ^{[2
]}

Oh, Kyungseok ^{[2
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept EE, 059 San 56-1, Seoul 151742, South Korea

[2] Samsang Elect Co, Adv Technol, R&D Ctr, Dev Team, Nongseo Dong, South Korea

来源：

2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.

引用

页码：43 / +

页数：2

共 50 条

[31] LOW-NOISE OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB [J].

ROLLAND, M ;

GAILLARD, S ;

VILLEMAIN, E ;

RIGAUD, D ;

VALENZA, M .

JOURNAL DE PHYSIQUE III, 1993, 3 (09) :1825-1832

[32] Synthesis and fabrication of high-performance n-type silicon nanowire transistors [J].

Zheng, GF ;

Lu, W ;

Jin, S ;

Lieber, CM .

ADVANCED MATERIALS, 2004, 16 (21) :1890-+

[33] Chemical-free n-type and p-type multilayer-graphene transistors [J].

Dissanayake, D. M. N. M. ;

Eisaman, M. D. .

APPLIED PHYSICS LETTERS, 2016, 109 (05)

[34] n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors [J].

Shi, Bowen ;

Wang, Yangyang ;

Li, Jingzhen ;

Zhang, Xiuying ;

Yan, Jiahuan ;

Liu, Shiqi ;

Yang, Jie ;

Pan, Yuanyuan ;

Zhang, Han ;

Yang, Jinbo ;

Pan, Feng ;

Lu, Jing .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (38) :24641-24651

[35] Incomplete ionization and carrier mobility in compensated p-type and n-type silicon [J].

Forster, M. (forster@apollonsolar.com), 1600, IEEE Electron Devices Society (03)

[36] Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructure [J].

School of Physics and Electronic Information, Wenzhou University, Wenzhou, Zhejiang Province 325027, China ;

不详 ;

不详 .

Semicond Sci Technol, 2008, 3 (601-607)

[37] SELECTIVE DEPOSITION OF METALS ON N-TYPE AND P-TYPE SILICON BY ELECTROCHEMICAL DISPLACEMENT [J].

TURNER, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (08) :C164-C164

[38] Incomplete Ionization and Carrier Mobility in Compensated p-Type and n-Type Silicon [J].

Forster, M. ;

Rougieux, F. E. ;

Cuevas, A. ;

Dehestru, B. ;

Thomas, A. ;

Fourmond, E. ;

Lemiti, M. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01) :108-113

[39] Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructure [J].

Wei, Wensheng ;

Wang, Tianmin ;

He, Yuliang .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) :601-607

[40] BARRIERS ON N-TYPE AND P-TYPE GERMANIUM [J].

RAHIMI, S ;

HENISCH, HK .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :896-897

← 1 2 3 4 5 →