Flicker Noise in N-type and P-type Silicon Nanowire Transistors

被引：0

作者：

Yang, Seungwon ^{[1
]}

Son, Younghwan ^{[1
]}

Suk, Sung Dae ^{[2
]}

Kim, Dong-Won ^{[2
]}

Park, Donggun ^{[2
]}

Oh, Kyungseok ^{[2
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept EE, 059 San 56-1, Seoul 151742, South Korea

[2] Samsang Elect Co, Adv Technol, R&D Ctr, Dev Team, Nongseo Dong, South Korea

来源：

2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.

引用

页码：43 / +

页数：2

共 50 条

[1] Random Telegraph Noise in N-type and P-type Silicon Nanowire Transistors
Yang, Seungwon
Yeo, Kyoung Hwan
Kim, Dong-Won
Seo, Kang-ill
Park, Donggun
Jin, Gyoyoung
Oh, KyungSeok
Shin, Hyungeheol
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 765 - +
[2] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
KLEIN, DL
KOLB, GA
POMPLIANO, LA
SULLIVAN, MV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
[3] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
BYKER, HJ
WOOD, VE
AUSTIN, AE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987
[4] PARAMAGNETIC RESONANCE IN N-TYPE AND P-TYPE SILICON
WILLENBROCK, FK
BLOEMBERGEN, N
PHYSICAL REVIEW, 1953, 91 (05): : 1281 - 1281
[5] FM-NOISE MEASUREMENTS ON P-TYPE AND N-TYPE SILICON IMPATT OSCILLATORS
SWARTZ, GA
CHIANG, YS
WEN, CP
YOUNG, A
ELECTRONICS LETTERS, 1973, 9 (25) : 578 - 580
[6] The piezoresistive effect in n-type junctionless silicon nanowire transistors
Kang, Ting-Kuo
NANOTECHNOLOGY, 2012, 23 (47)
[7] POSITRON LIFETIME MEASUREMENTS IN N-TYPE AND P-TYPE SILICON
DORIKENS, M
DAUWE, C
DORIKENS.L
APPLIED PHYSICS, 1974, 4 (03): : 271 - 272
[8] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON
LESKOSCHEK, W
FEICHTINGER, H
VIDRICH, G
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 601 - 610
[9] COMPENSATING EFFECTS OF PLATINUM IN N-TYPE AND P-TYPE SILICON
CATANIA, ME
CALCAGNO, L
COFFA, S
CAMPISANO, SU
RASPAGLIESI, M
FERLA, G
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (02): : 119 - 122
[10] INVESTIGATION OF LASER DIFFUSION IN N-TYPE AND P-TYPE SILICON
ARAKELYAN, VS
BARKHUDARYAN, GR
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1154 - 1155

← 1 2 3 4 5 →