Flicker Noise in N-type and P-type Silicon Nanowire Transistors

被引：0

作者：

Yang, Seungwon ^{[1
]}

Son, Younghwan ^{[1
]}

Suk, Sung Dae ^{[2
]}

Kim, Dong-Won ^{[2
]}

Park, Donggun ^{[2
]}

Oh, Kyungseok ^{[2
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept EE, 059 San 56-1, Seoul 151742, South Korea

[2] Samsang Elect Co, Adv Technol, R&D Ctr, Dev Team, Nongseo Dong, South Korea

来源：

2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.

引用

页码：43 / +

页数：2

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