Incoherent transport through molecules on silicon in the vicinity of a dangling bond

被引：17

作者：

Raza, Hassan ^{[1
,2
,3
]}

Bevan, Kirk H. ^{[1
,2
]}

Kienle, Diego ^{[1
,2
]}

机构：

[1] Purdue Univ, NSF, Network Computat Nanotechnol, W Lafayette, IN 47907 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.77.035432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We theoretically study the effect of a localized unpaired dangling bond (DB) on occupied molecular orbital conduction through a styrene molecule bonded to a n(++) H:Si(001)-(2x1) surface. For molecules relatively far from the DB, we find good agreement with the reported experiment using a model that accounts for the electrostatic contribution of the DB provided we include some dephasing due to low lying phonon modes. However, for molecules within 10 angstrom to the DB, we have to include electronic contribution as well along with higher dephasing to explain the transport features.

引用

页数：8

共 41 条

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