Theoretical Foundations of Memristor Cellular Nonlinear Networks: Stability Analysis With Dynamic Memristors

被引:43
作者
Ascoli, Alon [1 ]
Messaris, Ioannis [1 ]
Tetzlaff, Ronald [1 ]
Chua, Leon O. [2 ]
机构
[1] Tech Univ Dresden, Inst Circuits & Syst, Fac Elect & Comp Engn, D-01069 Dresden, Germany
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
Memristor; cellular nonlinear networks; nonlinear dynamics; memcomputing; state dynamic portrait; second-order dynamic route map; BIFURCATIONS; EQUILIBRIA; PARAMETERS; CROSSBAR;
D O I
10.1109/TCSI.2019.2957813
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
If the memristor, used in each cell of a memristive variant of the standard space-invariant Cellular Nonlinear Network (CNN), undergoes analogue memductance changes, the processing element operates as a second-order system. The Dynamic Route Map (DRM) technique, applicable to investigate first-order systems only, is no longer relevant. In this manuscript, a recently introduced methodology, generalizing the DRM technique to second-order systems, is applied to the models of Memristor CNN (M-CNN) cells, accomodating dynamic memristors. This allows to gain insights into the operating principles of these cellular structures, which make computations through the evolution of their states toward prescribed equilibria. Our analysis uncovers all possible local and global phenomena, which may emerge in the cell phase space under zero offset current for any self-feedback synaptic weight. Under these hypotheses, the dynamics of the M-CNN cell may significantly differ from those of a standard space-invariant CNN counterpart. The insertion of an offset current into each cell endows it with further properties, including monostability. The analysis method is used to demonstrate how a non-autonomous memristive array exploits the capability of its cells to feature monostability or bistability, depending upon the respective offset currents, to compute the element-wise logical AND between two binary images.
引用
收藏
页码:1389 / 1401
页数:13
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