Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

被引：10

作者：

Samra, Kawaljeet Singh ^{[1
]}

Thakur, Sonika ^{[1
]}

Singh, Lakhwant ^{[1
]}

机构：

[1] Guru Nanak Dev Univ, Dept Phys, Amritsar 143005, Punjab, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 05期

关键词：

Polyethersulfone; XRD; FTIR; TGA; UV-VIS; PL spectroscopy; X-RAY; POLYETHERSULFONE; ELECTRON; POLYMERS; CLUSTERS; FILMS;

D O I：

10.1016/j.nimb.2011.01.007

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10(13) ions cm(-2), but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：550 / 554

页数：5

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