Structural properties of epitaxial SrCuO2 thin films on SrTiO3 (001) substrates

被引：6

作者：

Mi, Shao-Bo ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich GmbH, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 07期

关键词：

Thin films; Interface structure; Transmission electron microscopy; Strontium copper oxide; Sputtering;

D O I：

10.1016/j.tsf.2010.10.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of SrCuO2 with tetragonal structure have been epitaxially grown on SrTiO3 (001) substrates by high-oxygen pressure sputtering technique. The interface structure between SrCuO2 and SrTiO3 and configuration of defects in SrCuO2 thin films have been characterized by means of high-resolution transmission electron microscopy. Two types of film-substrate interface structure coexist and are determined as bulk-SrO-TiO2-Sr(O) -CuO2-Sr-bulk and bulk-SrO-TiO2-SrO-Sr(O) -CuO2-Sr-bulk. The planar faults with double SrO atomic layers in (100) planes in SrCuO2 thin films are observed, which mainly arise from the coalescence of these two types of film-substrate interface structure. Meanwhile, planar faults in (110) planes are observed in thin films and structural models are proposed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2071 / 2074

页数：4

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