HETEROEPITAXIAL GROWTH OF SIGE ON SI BY LPE FOR HIGH EFFICIENCY SOLAR CELLS

被引：0

作者：

Wang, Yi ^{[1
]}

Lu, Xuesong ^{[1
]}

Huang, Susan R. ^{[2
]}

Wang, Xiaoting ^{[1
]}

Opila, Bobert ^{[2
]}

Barnett, Allen ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19713 USA

[2] Univ Delaware, Dept Mat Sci, Newark, DE 19713 USA

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

关键词：

LIQUID-PHASE EPITAXY;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1-x. with 0.5<x<1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.

引用

页码：1148 / +

页数：2

共 6 条

[1] THE ROLE OF HYDROGEN IN SILICON LIQUID-PHASE EPITAXY [J].

BERGMANN, R ;

KURIANSKI, J .

MATERIALS LETTERS, 1993, 17 (3-4) :137-140

[2]

Gray JL, 2008, IEEE PHOT SPEC CONF, P367

[3] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF SI1-XGEX LAYERS ON SI SUBSTRATES [J].

HANSSON, PO ;

WERNER, JH ;

TAPFER, L ;

TILLY, LP ;

BAUSER, E .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2158-2163

[4] LIQUID-PHASE EPITAXY [J].

KUPHAL, E .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (06) :380-409

[5]

NELSON H, 1963, RCA REV, V24, P603

[6] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES [J].

PEOPLE, R .

PHYSICAL REVIEW B, 1985, 32 (02) :1405-1408

← 1 →