Features of mode locking in laser with quantum well in broad waveguide layer

被引：10

作者：

Gadzhiev, I. M. ^{[1
]}

Buyalo, M. S. ^{[1
]}

Bakshaev, I. O. ^{[1
]}

Grigor'ev, R. I. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Leshko, A. Yu. ^{[1
]}

Lyutetskii, A. V. ^{[1
]}

Vinokurov, D. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

Portnoi, E. L. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

Technical Physic Letter; Reverse Bias Voltage; Carrier Capture; Passive Mode Lock; Section Laser;

D O I：

10.1134/S1063785010110192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Passive mode locking (PML) regimes in two-section lasers with quantum wells in broad waveguides operating at lambda = 1.06 mu m have been studied. The room temperature spectrum of the saturable absorber section retains exciton peak at the absorption edge, which decreases in amplitude shifts toward longer wavelengths by 18 meV when the reverse bias voltage is varied from 0 to 14 V. The PML regime is observed at relatively large voltages (above 9 V) that are necessary to compensate for the effect of band broadening in the gain section by the Stark shift of absorption in the reversely biased section. The PML regime exists, beginning with threshold values of the pumping current, and is characterized by a narrow RF signal with a 20-kHz linewidth. As the reverse bias voltage on the absorber section is increased, a low-frequency amplitude modulation superimposes on the mode-locked laser radiation.

引用

页码：1038 / 1041

页数：4

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