Effects of gallium, phosphorus and nickel addition in lead-free solders: A review

被引:17
作者
Sonawane, Pushkaraj D. [1 ]
Raja, V. K. Bupesh [2 ]
Palanikumar, K. [3 ]
Kumar, Eriki Ananda [4 ]
Aditya, Narayana [2 ]
Rohit, V. [2 ]
机构
[1] Sathyabama Inst Sci & Technol, Dept Mech Engn, Chennai 600119, Tamil Nadu, India
[2] Sathyabama Inst Sci & Technol, Sch Mech Engn, Chennai 600119, Tamil Nadu, India
[3] Sri Sai Ram Inst Technol, Chennai 600044, Tamil Nadu, India
[4] GCET, Dept Mech Engn, Kadapa 516162, Andhra Pradesh, India
关键词
Lead-free solder; Gallium; Phosphorus; Nickel; Solder alloy; Solder joints; MECHANICAL-PROPERTIES; MICROSTRUCTURE; STRENGTH; NI; BEHAVIOR; ALLOYS;
D O I
10.1016/j.matpr.2021.01.335
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ever since the start of the electronic age, soldering has been an important interconnecting method in microelectronic packaging. Since the 1960 s, development of information technology (IT)-infrastructure has witnessed rapid advancement owing to development of novel electronic equipment. This, in turn, has led to growth and progression of industries and improved human lifestyle. Present-day electronic gadgets are highly sophisticated and comprise several components. Sn-Pb based solder alloys have always delivered excellent results, offering several amazing benefits, namely, easy handling, low melting temperature, good working condition, ductility, and exceptional wetting on Cu and its alloys. Owing to its lethal and harmful effects on health and the environment, the US Congress introduced the legislation on the limited use of Pb in 1990. Consequently, alternatives to lead free solders are being developed for last three decades. This literature review discusses the effect of Gallium, Phosphorus and Nickel addition on solder alloy microstructure and mechanical properties. (c) 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Materials, Manufacturing and Mechanical Engineering for Sustainable Developments-2020.
引用
收藏
页码:3578 / 3581
页数:4
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