Investigation of the atomic core structure of the ((a)over-right-arrow plus (c)over-right-arrow)-mixed dislocation in wurtzite GaN

被引：6

作者：

Belabbas, I. ^{[1
]}

Bere, A. ^{[2
]}

Chen, J. ^{[3
]}

Ruterana, P. ^{[2
]}

Nouet, G. ^{[2
]}

机构：

[1] Ecole Natl Super Ingn Caen, CNRS, UMR 6176, Lab Struct Interfaces & Fonctionnalite Couches Mi, 6 Blvd Marechal Juin, F-14050 Caen, France

[2] Univ Ouagadougou, Lab Phys & Chem Environm, Ouagadougou 7021, Burkina Faso

[3] Inst Univ Technol, Lab Res Properties New Mat, Damigny 61250, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期

关键词：

D O I：

10.1002/pssc.200675441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using a tight-binding based ab-initio method, we have investigated the atomic and electronic core structures of the threading ((a) over right arrow + (c) over right arrow) -mixed dislocation in wurtzite gallium nitride. For this dislocation, two core configurations were found to occur: a 5/7-atoms ring and a complex double 5/6-atoms ring configurations. Both core configurations were found to induce in the bandgap as well deep as shallow gap states.

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页码：2940 / +

页数：2

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