Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy

被引：42

作者：

Kariya, M ^{[1
]}

Nitta, S ^{[1
]}

Yamaguchi, S ^{[1
]}

Kato, H ^{[1
]}

Takeuchi, T ^{[1
]}

Wetzel, C ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 6B期

关键词：

Al1-xInxN; GaN; lattice-matched; mosaicity; surface morphology; metalorganic vapor phase epitaxy;

D O I：

10.1143/JJAP.37.L697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al1-xInxN layers grown on GaN by metalorganic vapor phase epitaxy (MOVPE) have been structurally studied using omega and 2 theta-omega scans of X-ray diffraction (XRD) and a scanning electron microscope (SEM). Both omega and 2 theta-omega scans of XRD measurements revealed that Al0.83In0.17N, which is thought to be lattice-matched to GaN, has the smallest full-width at half maximum. The surface morphology of Al0.83In0.17N as observed by SEM was the smoothest among Al1-xInxN samples of various compositions.

引用

页码：L697 / L699

页数：3

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