Intrinsic effective piezoelectric coefficient e31,f for ferroelectric thin films -: art. no. 152901

被引：28

作者：

Ouyang, J ^{[1
]}

Ramesh, R ^{[1
]}

Roytburd, AL ^{[1
]}

机构：

[1] Univ Maryland, Dept Mat Sci & Engn, Mat Res & Sci Engn Ctr, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1899252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As a function of film orientation, the intrinsic effective piezoelectric coefficient e(31,f) is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb(ZrxTi1-x)O-3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e(31,f) are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e(31,f) is about -30 C/m(2) on the rhombohedral side of the morphotropic phase boundary. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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