Effect of O2 adsorption on electron scattering at Cu(001) surfaces

被引：61

作者：

Chawla, J. S. ^{[1
]}

Zahid, F. ^{[2
]}

Guo, H. ^{[2
]}

Gall, D. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, New York, NY 12180 USA

[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期

关键词：

THIN METAL-FILMS; RESISTIVITY; CU; CONDUCTIVITY; MECHANISMS; OXYGEN;

D O I：

10.1063/1.3489357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10(-3)-10(5) Pa s of O-2. This is attributed to partial specular surface scattering for smooth clean Cu(001) and for the surface with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. A model relates the surface coverage to the specularity parameter and finds adatom and advacancy scattering cross-sections of 0.8 +/- 0.2 and 0.06 +/- 0.03 nm(2), which are qualitatively validated by nonequilibrium ab initio transport simulations. The rates for resistance change are proportional to the O-2 partial pressure. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3489357]

引用

页数：3

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