ELECTRON-STIMULATED OXYGEN ADSORPTION ON THE SURFACE OF METALS AND SEMICONDUCTORS

被引：0

作者：

Ashkhotov, O. G. ^{[1
]}

Ashkhotova, I. B. ^{[1
]}

Aleroev, M. A. ^{[1
]}

Krimshokalova, D. A. ^{[1
]}

机构：

[1] Kabardino Balkarian State Univ, Dept Elect & Informat Technol, Inst Informat Elect & Comp Technol, Nalchik, Russia

来源：

PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS | 2019年 / 11期

关键词：

spectroscopy; surface; electrons; radiation; dissociation; migration; adsorption; desorption; experiments; exposure; BEAM; OXIDATION; AUGER; SI; CO;

D O I：

10.26456/pcascnn/2019.11.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The phenomenon of electron-stimulated adsorption occurs in almost all devices where electron emission is used. Electron-stimulated adsorption can have a significant effect on the state of the adsorbed layer. This review presents typical results obtained in the study of electronically stimulated processes of the oxygen adsorption from a gas phase and the main patterns of changes in the surface structure caused by electron-stimulated adsorption.

引用

页码：26 / 39

页数：14

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